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Preliminary data
Low VCE(sat) IGBT with Diode
Combi Pack
IXGP12N60U1 VCES
IC VCE(sat)
= = =
600 V 24 A 2.5 V
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 150 Clamped inductive load, L = 300 H TC = 25C
Maximum Ratings 600 600 20 30 24 12 48 ICM = 20 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C
TO-220 AB
G
C
E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque with screw M3 Mounting torque with screw M3.5
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 300 g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Features International standard package JEDEC TO-220 AB IGBT with antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRM
l l l l l l
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 250 2.5 100 2.5 V V A mA nA V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 750 A, VGE = 0 V = 250 A, VGE = VGE
Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
l l l l l
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 V
l l
l l
Advantages Easy to mount with 1 screw Space savings (two devices in one package) Reduces assembly time and cost High power density
(c) 1996 IXYS All rights reserved
92792D (9/96)
IXGP12N60U1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 8 750 125 30 50 15 25 100 200 500 300 1.2 70 25 45 S pF pF pF nC nC nC ns ns ns ns mJ TO-220 AB Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 * VCES , RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 * VCES , RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
700 500 2.0
Dim. A B C D E F G H J K M N Q R
100 200 1 600 400 2
800 700
ns ns mJ ns ns mJ
0.25
1.25 K/W K/W
Millimeter Min. Max. 12.70 14.93 14.23 16.50 9.66 10.66 3.54 4.08 5.85 6.85 2.29 2.79 1.15 1.77 2.79 6.35 0.64 0.89 2.54 BSC 4.32 4.82 0.64 1.39 0.51 0.76 2.04 2.49
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.270 0.090 0.110 0.045 0.070 0.110 0.250 0.025 0.035 0.100 BSC 0.170 0.190 0.025 0.055 0.020 0.030 0.080 0.115
Reverse Diode (FRED) Symbol VF Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.75 V
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 64 A/s VR = 360 V TJ = 100C IF = 1 A; -di/dt = 50 A/s; VR = 30 V TJ = 25C 2.5 150 35
I RM trr
A ns 50 ns 2.5 K/W
RthJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGP12N60U1
Fig. 1 Saturation Characteristics
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5
7V TJ = 25C VGE=15V 13V 11V 9V
Fig. 2
100 90 80 70 60 50 40 30 20 10 0
T J = 25C
Output Characterstics
V GE = 15V 13V
IC - Amperes
IC - Amperes
11V 9V 7V
0
2
4
6
8
10 12 14 16
18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
T J = 25C
Fig. 4
1.5 1.4
VGE = 15V
Temperature Dependence of Output Saturation Voltage
IC = 20A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
IC = 5A IC = 10A
VCE - Volts
6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15
IC = 20A IC = 10A IC = 5A
-50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10
T J = 25C T J = 125C TJ = - 40C
Fig. 6
1.2
Temperature Dependence of Breakdown and Threshold Voltage
VGE(th) IC = 250A
BV / VGE(th) - Normalized
VCE = 10 V
1.1 1.0 0.9 0.8 0.7 0.6 -50
IC - Amperes
BV CES IC = 250A
-25
0
25
50
75
100 125 150
VGE - Volts
G N JNB
TJ - Degrees C
(c) 1996 IXYS All rights reserved
IXGP12N60U1
Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area
15 13 11
V CE = 480V IG = 10mA
100
10
T J = 125C
9 7 5 3 1
IC - Amperes
VGE - Volts
IC = 10A
dV/dt < 3V/ns
1
0.1
0.01 0 10 20 30 40 50 0 100 200 300 400 500 600
Total Gate Charge - (nC)
VCE - Volts
Fig.9 Capacitance Curves
800 700
f = 1MHz Cies
Capacitance - pF
600 500 400 300 200 100 0 0 5 10 15 20 25
Coes Cres
V CE - Volts
Fig.10 Transient Thermal Impedance
Thermal Response - K/W
1.00
D=0.5 D=0.2 D=0.1
0.10 D=0.05
D=0.02 D=0.01 Single Pulse
0.01 10 -5
10 -4
10-3
10-2
10-1
10 0
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGP12N60U1
Fig.11 Maximum Forward Voltage Drop
40 35
Fig.12
25
Peak Forward Voltage V FR and Forward Recovery Time t FR
1000
TJ = 125C IF = 8A VFR
Current - Amperes
VFR - Volts
25 20 15 10 5 0 0.0 0.5 1.0 1.5 TJ = 150C TJ = 25C TJ = 100C
15 10 5 0
tfr
600 400 200 0 300
2.0
2.5
0
50
100
150
200
250
Voltage Drop - Volts
diF/dt - A/s
Fig.13 Junction Temperature Dependence off IRM and Qr
1.4 1.2
Fig.14
1.0
Reverse Recovery Charge
TJ = 100C
Normalized IRM / Qr
1.0 0.8
IRM
Qr - nanocoulombs
0.8 0.6 0.4 0.2 0.0
VR = 350V IF = 8A max
0.6 0.4 0.2 0.0 0
Qr
40
80
120
160
1
10
100
1000
TJ - Degrees C
diF /dt - A/s
Fig.15 Peak Reverse Recovery Current
25 20
T J = 100C VR = 350V IF = 8A
Fig.16
400
Reverse Recovery Time
TJ = 100C
trr - nanoseconds
300
VR = 350V IF = 8A
IRM - Amperes
15 10 5 0 0 100
max
200
100
0 200 300 400 0 100 200 300 400
diF /dt - A/s
diF /dt - A/s
(c) 1996 IXYS All rights reserved
tfr - nanoseconds
30
20
800
IXGP12N60U1
Fig.17 Diode Transient Thermal resistance junction to case
3.0 2.0 RthJC - K/W
1.0
0.1 0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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